Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation

نویسندگان

چکیده

This paper presents short-circuit (SC) performance of a commercial silicon-carbide (SiC) MOSFET device under repetitive SC stress at high drain source voltage. Two protocols are investigated to evaluate the impact gate-source voltage (VGS) depolarization and duration (TSC) reduction. The VGS depolarisation provides power density reduction allows preserve secure failure mode (FTO: Fail To Open) with an increase short circuit TSCmax. results demonstrate that SiC does not reduce cycling capability However, using get close IGBT robustness levels almost 1000 cycles @TSC = 10 μs. simulation chip temperature evolution during tests suggests degradations stay attributed junction (TJ) cycles, which leads fusion top Al inducing cracks into thick oxide.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Low Voltage SC Circuit Design Using Short-Channel MOSFET Switches

Analog switches, which are known to be the bottle-neck for reducing the supply voltage, are analyzed. MOSFET transistors with channel lengths shorter than the minimum feature size (L 0 ) in a given technology are proposed for use as switches operated at a low supply voltage. These MOSFETs have lower threshold voltage and higher punchthrough currents compared to a transistor of L 0 length (due t...

متن کامل

Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

متن کامل

Modeling and Design of a Low-Voltage SOI Suspended-Gate MOSFET (SG-MOSFET) with a Metal-over-Gate Architecture

A novel MEMS device architecture: the SOI SGMOSFET, which combines a solid-state MOS transistor and a suspended metal membrane in a unique metal-over-gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage oper...

متن کامل

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed prot...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Microelectronics Reliability

سال: 2021

ISSN: ['0026-2714', '1872-941X']

DOI: https://doi.org/10.1016/j.microrel.2021.114253